Ngama-60s wekhulu leminyaka elidlule, izisebenzi zesayensi nezobuchwepheshe zasebenzisa isimiso se-semiconductor PN junction luminescence ukuthuthukisa ama-LED light-emitting diode.I-LED eyakhiwe ngaleso sikhathi yayisebenzisa i-GaASP, umbala wayo okhanyayo ubomvu.Ngemuva kweminyaka ecishe ibe ngu-30 yentuthuko, i-LED wonke umuntu ayijwayele kakhulu isikwazi ukukhipha amalambu abomvu, awolintshi, aphuzi, aluhlaza okotshani, aluhlaza okwesibhakabhaka namanye.Kodwa-ke, i-LED emhlophe yokukhanyisa yathuthukiswa kuphela ngemuva kuka-2000, futhi umfundi wethulwa ku-LED emhlophe yokukhanyisa.Umthombo wokukhanya we-LED wangaphambili owenziwe ngesimiso se-semiconductor PN junction luminescence waphuma ekuqaleni kwawo-60s wekhulu lama-20.
Izinto ezazisetshenziswa ngaleso sikhathi kwakuyi-GaAsP, eyayikhanya ngokubomvu (λp = 650nm), futhi ekushayeleni okungu-20 mA, ukukhanya okukhanyayo kwakuyingxenye yezinkulungwane ezimbalwa ze-lumens, futhi ukusebenza kahle okukhanyayo okuhambisanayo kwakucishe kube ngu-0.1 lumens ngewatt ngayinye. .Maphakathi nawo-70s, izakhi ezi-In no-N zethulwa ukwenza ama-LED akhiqize ukukhanya okuluhlaza (λp=555nm), ukukhanya okuphuzi (λp=590nm) nokukhanya okusawolintshi (λp=610nm), kanye nokusebenza kahle kokukhanya nakho kukhuphuke kwafinyelela ku-1 ilume/watt.Ngasekuqaleni kweminyaka yama-80s, kwavela umthombo wokukhanya we-GaAlAs LED, okwenza ukukhanya kwe-LED okubomvu kufinyelele ama-lumens ayi-10 ngewathi ngayinye.Ekuqaleni kwawo-90, izinto ezimbili ezintsha, i-GaAlInP, ekhipha ukukhanya okubomvu nokuphuzi, kanye ne-GaInN, ekhipha ukukhanya okuluhlaza okwesibhakabhaka, yathuthukiswa ngempumelelo, okwathuthukisa kakhulu ukukhanya kwe-LED.Ngo-2000, i-LED eyenziwe yangaphambili yazuza ukukhanya okukhanyayo okungu-100 lumens/watt endaweni ebomvu nesawolintshi (λp=615nm), kuyilapho i-LED eyenziwe ngale yakamuva ingafinyelela ku-50 lumens/watt endaweni eluhlaza ( λp= 530nm).
Isikhathi sokuthumela: Nov-11-2022